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1N5617US - Microsemi Corporation

Description: Rectifiers Fast Rectifier (100-500ns)

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1N5617US - Microsemi Corporation - PCB symbol
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1N5617US - Microsemi Corporation PCB footprint - Other - Other - D-5A_2022
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3D Models
1N5617US - Microsemi Corporation - 3D model - Other - D-5A_2022
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1N5617US Details

  • Manufacturer Part Number:

    1N5617US

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS, D-5A, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Reverse Recovery Time-Max:

    0.15 µs

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

1N5617US Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5617US is -65°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 1N5617US requires a minimum voltage of 1.5V to 2.5V on the anode (A) pin with respect to the cathode (K) pin, and a maximum current of 1.5A.
  • The typical reverse recovery time for the 1N5617US is around 50ns, although this can vary depending on the specific application and operating conditions.
  • Yes, the 1N5617US is suitable for high-frequency applications up to 1GHz, making it a popular choice for RF and microwave designs.
  • To prevent electrostatic discharge (ESD) damage, it is recommended to use proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging.

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1N5617US Overview

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