Please enter a minimum 3 letters or numbers
Technical Content
Part Image

1N5802US - Microsemi Corporation

Description: DIODE GEN PURP 50V 1A D5A

Download 1N5802US Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
1N5802US - Microsemi Corporation - PCB symbol
click to zoom
PCB Footprints
1N5802US - Microsemi Corporation PCB footprint - Other - Other - 1N5802US-2
click to zoom

1N5802US Details

  • Manufacturer Part Number:

    1N5802US

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS, MELF-2

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Rep Pk Reverse Voltage-Max:

    50 V

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

1N5802US Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5802US is -65°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C (500°F) or less, and avoid applying excessive force or pressure to the device. Also, use a solder with a melting point of 180°C (356°F) or higher.
  • The maximum surge current rating for the 1N5802US is 30A for a 10ms pulse, and 15A for a 100ms pulse.
  • Yes, the 1N5802US is designed for high-reliability applications and is qualified to various military and aerospace standards, including MIL-PRF-19500 and NASA GSFC-S-311-P-1.
  • To prevent electrostatic discharge (ESD) damage, handle the 1N5802US with ESD-protective equipment, such as wrist straps, mats, and bags. Also, ensure that the device is stored in an ESD-protective package when not in use.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

1N5802US Overview

Use the download button to access the 1N5802US schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like 1N580, or try a keyword search, such as Rectifier Diodes

Parts related to 1N5802US

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

1N5802US Alternates

Showing results

Image Part Number Model
Part Image 1N5802US Micross Components

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon
Part Image 1N5802USE3 Microsemi Corporation (now Microchip)

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon
Part Image JANS1N5802US Bkc Semiconductors Inc

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon
Part Image 1N5802U Sensitron Semiconductors

Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon
Part Image JAN1N5802US Bkc Semiconductors Inc

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon
For a full list of alternate parts for 1N5802US, check out Findchips.com