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1N5806US - Microsemi Corporation

Description: Rectifiers UFR,FRR

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1N5806US - Microsemi Corporation PCB footprint - Other - Other - MELF_US
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1N5806US - Microsemi Corporation  - 3D model - Other - MELF_US
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1N5806US Details

  • Manufacturer Part Number:

    1N5806US

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS, MELF-2

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Rep Pk Reverse Voltage-Max:

    150 V

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    TIN LEAD OVER NICKEL

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

1N5806US Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5806US is -65°C to 175°C.
  • Yes, the 1N5806US is designed for high-reliability applications, including aerospace, defense, and industrial uses.
  • The maximum surge current rating for the 1N5806US is 300A for a 10/1000μs waveform.
  • Yes, the 1N5806US can be used in parallel to increase power handling, but it's essential to ensure that the devices are properly matched and connected to avoid uneven current sharing.
  • The typical junction-to-case thermal resistance of the 1N5806US is 1.5°C/W.

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1N5806US Overview

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Part Image 1N5806USE3 Microchip Technology Inc

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon

Part Image 1N5806U02A STMicroelectronics

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon

Part Image JAN1N5806US VPT Components

Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon

Part Image JANTX1N5806US Semtech Corporation

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon

Part Image JANS1N5806US Microsemi Corporation (now Microchip)

Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon

For a full list of alternate parts for 1N5806US, check out Findchips.com