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1N6478HE3/96 - Vishay

Description: Diode 50 V 1A Surface Mount DO-213AB

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1N6478HE3/96 - Vishay PCB footprint - Other - Other - GL41(DO-213AB)
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1N6478HE3/96 Details

  • Manufacturer Part Number:

    1N6478HE3/96

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JEDEC-95 Code:

    DO-213AB

  • JESD-30 Code:

    O-PELF-R2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    250

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    50 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    50 V

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

  • Time@Peak Reflow Temperature-Max (s):

    30

1N6478HE3/96 Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the 1N6478HE3/96 is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the 1N6478HE3/96 is a high-speed diode with a switching time of less than 1 ns, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum surge current rating for the 1N6478HE3/96 is 150 A for a single pulse of 10 ms duration.
  • No, the 1N6478HE3/96 is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • The thermal resistance of the 1N6478HE3/96 is 15°C/W junction-to-ambient and 5°C/W junction-to-case.

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1N6478HE3/96 Overview

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Part Image 1N6478HE3/97 Vishay Semiconductors

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