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1SS385FV,L3F - Toshiba

Description: Small-signal Schottky barrier diode Common cathode 10V, 0.1A, in 3 pin VESM package

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1SS385FV,L3F - Toshiba PCB footprint - Other - Other - 1SS385FV,L3F-2
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1SS385FV,L3F - Toshiba  - 3D model - Other - 1SS385FV,L3F-2
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1SS385FV,L3F Details

  • Manufacturer Part Number:

    1SS385FV,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.5 V

  • JESD-30 Code:

    R-PDSO-F3

  • Non-rep Pk Forward Current-Max:

    1 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    0.15 W

  • Rep Pk Reverse Voltage-Max:

    15 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    10 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

1SS385FV,L3F Frequently Asked Questions (FAQs)

  • Toshiba provides a recommended PCB layout in their application note, which includes guidelines for component placement, trace routing, and thermal management to ensure optimal performance and minimize noise.
  • The 1SS385FV,L3F has a high power dissipation, so thermal management is crucial. Toshiba recommends using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB should be designed to dissipate heat efficiently.
  • The 1SS385FV,L3F has an operating temperature range of -40°C to 125°C, but Toshiba recommends derating the device above 85°C to ensure reliable operation.
  • Toshiba recommends following good EMC design practices, such as using a metal shield around the device, keeping signal traces short and away from the device, and using a common mode choke to reduce electromagnetic radiation.
  • Toshiba recommends storing the 1SS385FV,L3F in a dry, cool place, away from direct sunlight and moisture. The device should be stored in its original packaging or in a similar anti-static package to prevent damage.

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1SS385FV,L3F Overview

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