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2N3055AG - onsemi

Description: Current-Gain - Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN fT = 2.2 MHz (Min) - PNP; Safe Operating Area - Rated to 60 V and 120 V, Respectively; Pb-Free Packages are Available

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2N3055AG Details

  • Manufacturer Part Number:

    2N3055AG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    ROHS COMPLIANT, CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    0.8 MHz

2N3055AG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3055AG is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 50-60% of its maximum rating to ensure reliable operation.
  • To ensure the 2N3055AG is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V, and the collector-emitter voltage (VCE) is around 1-2V. Additionally, the base current should be limited to around 1-2mA to prevent overheating.
  • The recommended heatsink for the 2N3055AG depends on the specific application and power dissipation requirements. However, a general rule of thumb is to use a heatsink with a thermal resistance of around 1-2°C/W to ensure the device operates within its safe operating area.
  • While the 2N3055AG can be used as a switch, it's not the most suitable device for this application. The device has a relatively high saturation voltage (around 1-2V) and a moderate current gain, which can lead to increased power losses and reduced efficiency. A dedicated switching transistor or a MOSFET may be a better choice for switching applications.
  • To protect the 2N3055AG from overvoltage and overcurrent, you can use a combination of voltage regulators, current limiters, and protective diodes. Additionally, ensure that the device is operated within its recommended voltage and current ratings, and provide adequate heat sinking to prevent overheating.

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2N3055AG Overview

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