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2N3055G - onsemi

Description: Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3)

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2N3055G - onsemi PCB footprint - Other - Other - TO−204 (TO−3) CASE 1−07 ISSUE Z_2024-5
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2N3055G - onsemi  - 3D model - Other - TO−204 (TO−3) CASE 1−07 ISSUE Z_2024-5
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2N3055G Details

  • Manufacturer Part Number:

    2N3055G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    LEAD FREE, CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2.5 MHz

2N3055G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the 2N3055G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum of 80% of its rated voltage and current to ensure reliable operation.
  • To ensure proper biasing of the 2N3055G for linear amplifier applications, it's essential to follow a few key guidelines. First, choose a suitable quiescent current (Iq) that allows the transistor to operate within its linear region. Next, select a collector-emitter voltage (Vce) that provides sufficient headroom for the desired output voltage swing. Finally, ensure the base-emitter voltage (Vbe) is within the recommended range (typically 0.6-0.8V) to maintain a stable operating point.
  • The recommended heatsink design for the 2N3055G involves selecting a heatsink with a thermal resistance (Rth) that is compatible with the device's power dissipation requirements. A general rule of thumb is to choose a heatsink with an Rth of 1-2°C/W or lower, depending on the application's power requirements. Additionally, ensure the heatsink is properly mounted to the transistor using a suitable thermal interface material (TIM) and that the transistor's case temperature (Tc) is kept below the maximum rated value (150°C for the 2N3055G).
  • While the 2N3055G is primarily designed for linear amplifier applications, it can be used in switching applications with some caution. However, it's essential to ensure the device is operated within its safe operating area (SOA) and that the switching frequency is not too high (typically <10 kHz). Additionally, consider using a snubber circuit to reduce electromagnetic interference (EMI) and ensure reliable operation.
  • To protect the 2N3055G from electrical overstress (EOS), it's essential to implement proper circuit protection measures. These may include using voltage regulators or zener diodes to limit the voltage across the transistor, as well as adding current-limiting resistors or fuses to prevent excessive current flow. Additionally, consider using a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to absorb voltage spikes and surges.

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