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2N3583 - Central Semiconductor

Description: Bipolar Transistors - BJT NPN High Power

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2N3583 - Central Semiconductor PCB footprint - Other - Other - TO-66
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2N3583 Details

  • Manufacturer Part Number:

    2N3583

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-66

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Central Semiconductor Corp

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Base Capacitance-Max:

    120 pF

  • Collector-Emitter Voltage-Max:

    175 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-66

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

  • VCEsat-Max:

    5 V

2N3583 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N3583 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions and biasing circuits provided in the datasheet. Additionally, consider the transistor's current gain (hFE) and base-emitter voltage (VBE) when designing the biasing circuit. A general rule of thumb is to maintain a base-emitter voltage between 0.6V to 0.8V for optimal performance.
  • The maximum collector current (IC) for the 2N3583 is 1A, as specified in the datasheet. However, it's essential to consider the transistor's power dissipation (PD) and thermal resistance (RθJA) when designing the circuit to ensure the transistor operates within its safe operating area (SOA).
  • Yes, the 2N3583 can be used as a switch, but it's essential to consider its switching characteristics, such as the transition frequency (ft) and storage time (ts). The transistor's switching performance may not be suitable for high-frequency applications. Additionally, ensure the transistor is properly biased and driven to minimize switching losses and ensure reliable operation.
  • To protect the 2N3583 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits, such as diodes or resistors, to the design to prevent damage from static electricity.

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2N3583 Overview

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Part Image 2N3583 Harris Semiconductor

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