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2N3771G - onsemi

Description: Obsolete - 20 A, 60 V NPN Bipolar Power Transistor

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PCB Footprints
2N3771G - onsemi PCB footprint - Other - Other - 2N3771G-2
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2N3771G - onsemi  - 3D model - Other - 2N3771G-2
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2N3771G Details

  • Manufacturer Part Number:

    2N3771G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    0.2 MHz

2N3771G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3771G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with onsemi's application notes or contact their support team for more information.
  • To ensure the 2N3771G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including temperature, current, and voltage ranges.
  • The recommended PCB layout and thermal management for the 2N3771G involve using a thermally efficient PCB design, such as a copper-filled thermal pad, and ensuring good thermal conductivity between the device and the heat sink. It's also essential to follow onsemi's recommended land pattern and thermal design guidelines to minimize thermal resistance and ensure reliable operation.
  • While the 2N3771G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, with a typical turn-on time of around 10-20μs, and a turn-off time of around 20-30μs. Additionally, the device's maximum switching frequency is limited to around 100kHz. It's essential to consult with onsemi's application notes and ensure the device is operated within its recommended specifications for switching applications.
  • To handle ESD protection for the 2N3771G, it's essential to follow proper handling and storage procedures to prevent electrostatic discharge (ESD) damage. This includes using ESD-safe materials, such as anti-static bags and wrist straps, and ensuring the device is properly grounded during handling and assembly. Additionally, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design to protect the 2N3771G from ESD events.

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2N3771G Overview

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Part Image 2N3771E3 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Part Image 2N3771 Space Power Electronics Inc

Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Part Image 2N3771 Solitron Devices Inc

Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Part Image 2N3771 Semitronics Corp

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Part Image JAN2N3771 Motorola Semiconductor Products

Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin

For a full list of alternate parts for 2N3771G, check out Findchips.com