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2N3773G - onsemi

Description: Bipolar (BJT) Transistor NPN 140 V 16 A 150 W Through Hole TO-204 (TO-3)

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2N3773G - onsemi PCB footprint - Other - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-2
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2N3773G - onsemi  - 3D model - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-2
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2N3773G Details

  • Manufacturer Part Number:

    2N3773G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    LEAD FREE, CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N3773G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3773G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 50-60% of its maximum rating to ensure reliable operation.
  • To ensure the 2N3773G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended operating range.
  • The recommended heatsink design for the 2N3773G depends on the specific application and operating conditions. However, a general guideline is to use a heatsink with a thermal resistance of around 1-2°C/W, and to ensure good thermal contact between the device and the heatsink. The heatsink should also be designed to minimize thermal resistance and ensure good airflow.
  • While the 2N3773G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its rise and fall times, may not be as well-suited for high-frequency switching applications as other devices specifically designed for switching. Additionally, the device's maximum switching frequency should not exceed 100 kHz.
  • To protect the 2N3773G from electrostatic discharge (ESD), you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static bag or container, and the PCB should be designed with ESD protection in mind, such as using ESD protection diodes or resistors.

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Part Image 2N3773 STMicroelectronics

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin