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2N3821 - InterFET

Description: JFET N-Channel -50V Low Ciss

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PCB Footprints
2N3821 - InterFET PCB footprint - Other - Other - TO-72_2022-9
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2N3821 - InterFET  - 3D model - Other - TO-72_2022-9
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2N3821 Details

  • Manufacturer Part Number:

    2N3821

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N3821 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3821 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N3821 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (Vce) is within the recommended range (typically around 1-10V). You should also ensure that the device is operated within its recommended current and power ratings.
  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as keeping the device away from heat sources, using a solid ground plane, and minimizing trace lengths and widths. Additionally, ensure proper thermal management by providing adequate heat sinking and airflow around the device.
  • While the 2N3821 is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, you should be aware of the device's switching characteristics, such as its transition frequency and rise/fall times, to ensure reliable operation.
  • To protect the 2N3821 from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures, such as using anti-static bags and wrist straps. You should also consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to your circuit design.

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2N3821 Overview

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2N3821 Alternates

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Image Part Number Model
Part Image 2N3821 Microchip Technology Inc

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72

Part Image 2N3821E3 Microchip Technology Inc

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF

Part Image 2N3821 Microsemi Corporation (now Microchip)

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72

Part Image 2N3821 Vishay Intertechnologies

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72

Part Image 2N3821 Central Semiconductor Corp

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72

For a full list of alternate parts for 2N3821, check out Findchips.com