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2N3822 - InterFET

Description: JFET N-Channel -50V Low Ciss

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Symbol
2N3822 - InterFET - PCB symbol
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PCB Footprints
2N3822 - InterFET PCB footprint - Other - Other - TO-72_2022-9
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3D Models
2N3822 - InterFET - 3D model - Other - TO-72_2022-9
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2N3822 Details

  • Manufacturer Part Number:

    2N3822

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N3822 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N3822 is -55°C to 150°C, although the device can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N3822 requires a Vgs of 0V to -5V, and a Vds of 10V to 30V. The device should also be operated within the recommended current limits to prevent overheating and ensure reliability.
  • The maximum allowable power dissipation for the 2N3822 is 1.5W at a case temperature of 25°C. However, this value can be derated to ensure reliable operation at higher temperatures.
  • Yes, the 2N3822 can be used in switching applications due to its fast switching times (td(on) = 10ns, td(off) = 20ns) and low gate charge (Qg = 10nC). However, the device should be properly driven and biased to ensure reliable operation.
  • The 2N3822 has a relatively high cutoff frequency (fT = 1.5GHz) and can be used in high-frequency applications up to several hundred MHz. However, the device's performance may degrade at higher frequencies due to its internal capacitances and inductances.

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2N3822 Overview

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2N3822 Alternates

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Part Image 2N3822E3 Microchip Technology Inc

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Part Image 2N3822E3 Microsemi Corporation (now Microchip)

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF
Part Image JANTX2N3822 Motorola Semiconductor Products

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Part Image 2N3822 Vishay Intertechnologies

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Part Image JANTXV2N3822 Microsemi Corporation (now Microchip)

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF
For a full list of alternate parts for 2N3822, check out Findchips.com