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2N3824 - InterFET

Description: JFET N-Channel -50V Low Ciss

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Symbol
2N3824 - InterFET - PCB symbol
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PCB Footprints
2N3824 - InterFET PCB footprint - Other - Other - TO-72_2022-9
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3D Models
2N3824 - InterFET - 3D model - Other - TO-72_2022-9
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2N3824 Details

  • Manufacturer Part Number:

    2N3824

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N3824 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N3824 is -55°C to 150°C, although the device can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N3824 requires a Vgs of 0V to -5V, and a Vds of 10V to 40V. Additionally, the device should be operated within the recommended current limits to prevent overheating and ensure reliability.
  • The maximum allowable power dissipation for the 2N3824 is 1.5W at a case temperature of 25°C. However, this value can be derated to 0.75W at 100°C case temperature.
  • Yes, the 2N3824 can be used in switching applications due to its fast switching times (td(on) = 10ns, td(off) = 20ns) and low gate charge (Qg = 10nC). However, the device should be operated within the recommended frequency range to prevent overheating and ensure reliability.
  • The 2N3824 is suitable for high-frequency applications up to 1GHz due to its low input capacitance (Ciss = 120pF) and low output capacitance (Coss = 30pF). However, the device's performance may degrade at frequencies above 1GHz.

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2N3824 Overview

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2N3824 Alternates

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Part Image 2N3824 Solitron Devices Inc

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72