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2N4119A - InterFET

Description: JFET JFET N-Channel -40V 50mA 300mW 2mW

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PCB Footprints
2N4119A - InterFET PCB footprint - Other - Other - TO-72_2022-9
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2N4119A - InterFET  - 3D model - Other - TO-72_2022-9
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2N4119A Details

  • Manufacturer Part Number:

    2N4119A

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4119A Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N4119A is -55°C to 150°C, although the datasheet only specifies a range of -55°C to 125°C for certain parameters.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, consider the device's input impedance, output impedance, and voltage gain when designing the biasing circuit.
  • The maximum power dissipation for the 2N4119A is 1.5 W, but this can be affected by factors such as ambient temperature, thermal resistance, and package type. Be sure to calculate the power dissipation based on the specific application and operating conditions.
  • While the 2N4119A is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging. Additionally, consider adding ESD protection circuits or devices in the application circuit.

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Part Image 2N4119A Solitron Devices Inc

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