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2N4338 - InterFET

Description: JFET N-Channel -50V Low Ciss

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PCB Footprints
2N4338 - InterFET PCB footprint - Other - Other - TO-18
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2N4338 - InterFET  - 3D model - Other - TO-18
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2N4338 Details

  • Manufacturer Part Number:

    2N4338

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    2500 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4338 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N4338 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N4338 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V and the collector-emitter voltage (Vce) to around 1-2V. You may also need to adjust the bias resistors to achieve the desired quiescent current.
  • For optimal performance and thermal management, it's recommended to follow good PCB layout practices, such as keeping the transistor away from heat sources, using a solid ground plane, and minimizing thermal resistance. You should also consider using a heat sink or thermal pad to dissipate heat, especially in high-power applications.
  • To protect the 2N4338 from electrostatic discharge (ESD), you should follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. You may also consider adding ESD protection diodes or resistors to the circuit to prevent damage from static electricity.
  • The reliability and lifespan of the 2N4338 depend on various factors, including operating conditions, temperature, and usage. In general, the device is designed to operate for thousands of hours under normal conditions. However, it's recommended to follow the manufacturer's guidelines and perform regular maintenance to ensure optimal performance and extend the device's lifespan.

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2N4338 Overview

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Part Image 2N4338 Solitron Devices Inc

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18

Part Image 2N4338 Texas Instruments

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18

Part Image 2N4338 Central Semiconductor Corp

Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Junction FET, TO-18