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2N4339 - InterFET

Description: JFET N-Channel -50V Low Ciss

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PCB Footprints
2N4339 - InterFET PCB footprint - Other - Other - TO-18
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2N4339 - InterFET  - 3D model - Other - TO-18
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2N4339 Details

  • Manufacturer Part Number:

    2N4339

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    1700 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4339 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N4339 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure safe operation.
  • Thermal management is critical for the 2N4339, especially in high-power applications. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and consider using a heat sink with a thermal conductivity of at least 1 W/m-K. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
  • Store the 2N4339 in a dry, cool place, away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the leads or die. Use anti-static wrist straps, mats, or packaging materials to prevent electrostatic discharge (ESD) damage. Follow standard ESD handling procedures to prevent damage during assembly and testing.
  • Yes, the 2N4339 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's capabilities. Also, be aware of the potential for electromagnetic interference (EMI) and take necessary precautions to minimize it.
  • The gate resistor value depends on the specific application, but a general rule of thumb is to use a value between 1 kΩ to 10 kΩ. A higher value can help reduce power consumption, but may increase switching times. A lower value can improve switching times, but may increase power consumption. Consult the datasheet and application notes for more specific guidance.

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2N4339 Overview

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Part Image 2N4339G4 TT Electronics Resistors

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For a full list of alternate parts for 2N4339, check out Findchips.com