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2N4341 - InterFET

Description: JFET N-Channel -50V Low Ciss

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2N4341 - InterFET PCB footprint - Other - Other - TO-18
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2N4341 - InterFET  - 3D model - Other - TO-18
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2N4341 Details

  • Manufacturer Part Number:

    2N4341

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    800 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4341 Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2N4341 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure linear operation, the 2N4341 should be biased in the active region, where the base-emitter voltage is around 0.7V and the collector-emitter voltage is around 1-2V. The base current should be limited to prevent saturation, and the collector current should be within the specified rating.
  • For optimal thermal management, it's recommended to use a heat sink with a thermal resistance of around 10-20°C/W. The PCB layout should ensure good thermal conductivity, with a solid copper plane under the device and minimal thermal resistance between the device and the heat sink.
  • Yes, the 2N4341 can be used as a switch, but it's not optimized for high-frequency switching applications. The switching characteristics depend on the specific application, but in general, the device can switch on and off within a few microseconds, with a rise and fall time of around 100-200 ns.
  • To protect the 2N4341 from ESD, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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Part Image 2N4341 Central Semiconductor Corp

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