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2N4403BU - onsemi

Description: High gain; Pb-Free Packages

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2N4403BU - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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2N4403BU - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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2N4403BU Details

  • Manufacturer Part Number:

    2N4403BU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3

  • Package Description:

    PACKAGE-3

  • Manufacturer Package Code:

    135AN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    255 ns

  • Turn-on Time-Max (ton):

    35 ns

2N4403BU Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N4403BU is -55°C to 150°C.
  • Yes, the 2N4403BU can be used as a switch in high-frequency applications up to 100 MHz, but it's essential to consider the transistor's transition frequency (fT) and ensure it's within the recommended operating frequency range.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, consider the transistor's current gain (hFE) and base-emitter voltage (VBE) when designing the biasing circuit.
  • The recommended storage temperature range for the 2N4403BU is -55°C to 150°C, and it's essential to store the devices in a dry, cool place, away from direct sunlight and moisture.
  • The 2N4403BU has a maximum collector-emitter voltage (VCEO) of 40V, so it's suitable for low-to-moderate voltage applications. However, for high-voltage applications, consider using a transistor with a higher voltage rating.

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2N4403BU Overview

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2N4403BU Alternates

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Image Part Number Model
Part Image 2N4403TFR Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Part Image 2N4403TF Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Part Image 2N4403TRF Central Semiconductor Corp

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Part Image 2N4403D74Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

Part Image 2N4403 Lite-On Semiconductor Corporation

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

For a full list of alternate parts for 2N4403BU, check out Findchips.com