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2N4416A - InterFET

Description: JFET N-Channel -35V Low Ciss

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Symbol
2N4416A - InterFET - PCB symbol
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PCB Footprints
2N4416A - InterFET PCB footprint - Other - Other - TO-72_2022-9
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3D Models
2N4416A - InterFET - 3D model - Other - TO-72_2022-9
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2N4416A Details

  • Manufacturer Part Number:

    2N4416A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    0.8 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Power Gain-Min (Gp):

    10 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4416A Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2N4416A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure linear operation, the 2N4416A should be biased in the active region, where the base-emitter voltage is around 0.7V and the collector-emitter voltage is around 1-2V. The base current should be limited to prevent saturation, and the collector current should be within the specified range.
  • For optimal thermal performance, it's recommended to use a PCB layout with a large copper area for heat dissipation. The device should be mounted on a heat sink or a thermal pad, and the PCB should have adequate clearance around the device to prevent thermal coupling. Additionally, a thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.
  • While the 2N4416A is primarily designed for linear applications, it can be used in switching applications with some caution. The device's switching characteristics, such as rise and fall times, should be carefully evaluated to ensure it meets the requirements of the specific application. Additionally, the device's maximum switching frequency should not exceed the recommended value to prevent overheating.
  • To protect the 2N4416A from ESD, it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should be stored in an anti-static bag or tube, and the PCB should have ESD protection devices, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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2N4416A Overview

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2N4416A Alternates

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Image Part Number Model
Part Image 2N4416A-TO-72 Linear Integrated Systems

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72
Part Image 2N4416A Micro Electronics Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72, TO-72DH, 3 PIN
Part Image 2N4416A Thales Group

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72
Part Image 2N4416A Vishay Intertechnologies

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF
Part Image 2N4416A Texas Instruments

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72
For a full list of alternate parts for 2N4416A, check out Findchips.com