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2N4861 - InterFET

Description: JFET N-Channel -30V Low Noise, TO-18

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2N4861 - InterFET PCB footprint - Other - Other - TO-18
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2N4861 - InterFET  - 3D model - Other - TO-18
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2N4861 Details

  • Manufacturer Part Number:

    2N4861

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    TO-18, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    60 Ω

  • FET Technology:

    JUNCTION

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N4861 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N4861 is -55°C to 150°C, although the device can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N4861 requires a Vgs of 0V to -5V, and a Vds of 10V to 30V. Additionally, the device should be operated within the recommended current limits to prevent overheating and ensure reliability.
  • The maximum allowable power dissipation for the 2N4861 is 1.5W, and it is essential to ensure that the device is properly heat-sinked to prevent overheating and thermal runaway.
  • Yes, the 2N4861 can be used in switching applications due to its fast switching times (tr and tf) of 10ns and 20ns, respectively. However, it is essential to ensure that the device is properly driven and biased to prevent overheating and ensure reliable operation.
  • No, the 2N4861 is not a radiation-hardened device. It is not designed to operate in high-radiation environments, and its performance may be affected by radiation exposure.

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2N4861 Overview

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Part Image 2N4861 Solitron Devices Inc

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Part Image MV2N4861 Microchip Technology Inc

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Part Image 2N4861 Semiconductors Inc

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Part Image JANTX2N4861 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA

Part Image JANTXV2N4861 Temic Semiconductors

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA

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