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2N4919G - onsemi

Description: Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available

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PCB Footprints
2N4919G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225
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2N4919G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225
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2N4919G Details

  • Manufacturer Part Number:

    2N4919G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

2N4919G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N4919G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N4919G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (Vce) is sufficient to maintain a linear operating region. You may need to adjust the bias resistors and voltage sources to achieve the desired operating point.
  • The recommended storage temperature range for the 2N4919G is -55°C to 150°C. Storing the device outside of this range may affect its reliability and performance.
  • While the 2N4919G is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, you should ensure that the device is properly biased and that the switching frequency is within the device's capabilities. You may need to add external components, such as snubbers or clamp diodes, to prevent voltage spikes and ensure reliable operation.
  • To handle ESD protection for the 2N4919G, you should follow proper handling and storage procedures to prevent electrostatic discharge (ESD) damage. This includes using ESD-safe materials, grounding yourself before handling the device, and storing the device in a protective package. You may also consider adding external ESD protection components, such as TVS diodes or ESD protection arrays, to your design.

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2N4919G Overview

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Part Image TIP32A Micro Commercial Components

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Part Image BD242ATU Fairchild Semiconductor Corporation

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For a full list of alternate parts for 2N4919G, check out Findchips.com