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2N4920G - onsemi

Description: Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available

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PCB Footprints
2N4920G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
2N4920G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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2N4920G Details

  • Manufacturer Part Number:

    2N4920G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

2N4920G Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2N4920G is typically defined by the manufacturer as the region where the transistor can operate safely without damage. This information is usually provided in the application notes or through direct communication with the manufacturer. For the 2N4920G, the SOA is typically limited by the maximum voltage and current ratings, as well as the thermal limitations of the device.
  • To ensure the 2N4920G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet or application notes. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, you should ensure that the transistor is operated within its recommended current and voltage limits to avoid nonlinear behavior.
  • The recommended PCB layout and thermal management for the 2N4920G involve using a thermally conductive PCB material, placing the transistor in a location with good airflow, and using thermal vias or heat sinks to dissipate heat. The PCB layout should also minimize parasitic inductance and capacitance to ensure high-frequency performance. Consult the datasheet and application notes for specific guidelines on PCB layout and thermal management.
  • To handle ESD protection for the 2N4920G, you should follow standard ESD protection practices, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD-protective workstations. Additionally, you can use external ESD protection devices, such as TVS diodes or ESD protection arrays, to protect the transistor from electrostatic discharge.
  • The reliability and lifespan expectations for the 2N4920G are typically provided in the datasheet or reliability reports from the manufacturer. The transistor's reliability is affected by factors such as operating conditions, temperature, and quality of the device. Under normal operating conditions, the 2N4920G can be expected to have a long lifespan, typically exceeding 10 years, but this can vary depending on the specific application and operating conditions.

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2N4920G Overview

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