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2N4922G - onsemi

Description: Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement of PNP 2N4918, 2N4919, 2N4920; Pb-Free Packages are Available

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PCB Footprints
2N4922G - onsemi PCB footprint - Other - Other - 2N4922G-2
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2N4922G - onsemi  - 3D model - Other - 2N4922G-2
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2N4922G Details

  • Manufacturer Part Number:

    2N4922G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

2N4922G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N4922G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area can be estimated to be around 10-15A for a short duration (e.g., 10ms) and 5-7A for a longer duration (e.g., 100ms).
  • To ensure the 2N4922G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.65-0.7V, and the collector-emitter voltage (Vce) is around 1-2V. Additionally, the base current should be limited to around 1-5mA to prevent overheating.
  • For optimal thermal management, it is recommended to use a heat sink with a thermal resistance of around 1-2°C/W. The PCB layout should ensure good thermal conductivity, with a large copper area around the transistor. A minimum of 2oz copper thickness is recommended. Additionally, ensure that the transistor is mounted with a suitable thermal interface material (TIM) to minimize thermal resistance.
  • While the 2N4922G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's SOA and thermal management become critical in switching applications. It is recommended to carefully evaluate the device's performance and thermal management in your specific application.
  • To protect the 2N4922G from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins. Additionally, ensure that the PCB layout and assembly process minimize the risk of ESD damage. It is also recommended to handle the devices with ESD-safe materials and follow proper ESD handling procedures.

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2N4922G Overview

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