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2N4923G - onsemi

Description: Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement of PNP 2N4918, 2N4919, 2N4920; Pb-Free Packages are Available

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PCB Footprints
2N4923G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
2N4923G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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2N4923G Details

  • Manufacturer Part Number:

    2N4923G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

2N4923G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N4923G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • To ensure the 2N4923G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. You should also ensure that the device is operated within the recommended current and voltage ranges.
  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as keeping the transistor away from heat sources, using a solid ground plane, and minimizing trace lengths. Additionally, ensure proper thermal management by providing adequate heat sinking and airflow around the device.
  • While the 2N4923G is primarily designed for linear applications, it can be used in switching applications with some caution. However, you should be aware of the device's switching characteristics, such as its transition frequency and storage time, to ensure reliable operation. It's also important to follow proper switching circuit design practices to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To protect the 2N4923G from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. You should also ensure that your PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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2N4923G Overview

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For a full list of alternate parts for 2N4923G, check out Findchips.com