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2N5020 - InterFET

Description: JFET JFET P-Channel -50V 50mA 500mW 4mW

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PCB Footprints
2N5020 - InterFET PCB footprint - Other - Other - TO-18
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3D Models
2N5020 - InterFET  - 3D model - Other - TO-18
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2N5020 Details

  • Manufacturer Part Number:

    2N5020

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N5020 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5020 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N5020 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (Vce) is within the recommended range (typically around 1-10V). You should also ensure that the device is operated within its recommended current and power ratings.
  • The recommended storage and handling procedure for the 2N5020 includes storing the devices in their original packaging, away from direct sunlight and moisture. It's also recommended to handle the devices by the body, rather than the leads, to prevent damage to the device. Additionally, it's recommended to follow proper electrostatic discharge (ESD) precautions when handling the devices.
  • The 2N5020 is a general-purpose transistor and is not optimized for high-frequency applications. While it can be used in some high-frequency applications, its performance may not be optimal. For high-frequency applications, it's recommended to use a transistor specifically designed for high-frequency operation.
  • The recommended soldering profile for the 2N5020 includes a peak temperature of 260°C (500°F) for a maximum of 10 seconds. It's also recommended to use a solder with a melting point below 220°C (428°F) and to avoid exposing the device to excessive thermal stress.

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2N5020 Overview

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Part Image 2N5020 Fairchild Semiconductor Corporation

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