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2N5088TAR - onsemi

Description: Obsolete - Low Noise NPN Bipolar Transistor, TO-92

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2N5088TAR - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O-1
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3D Models
2N5088TAR - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O-1
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2N5088TAR Details

  • Manufacturer Part Number:

    2N5088TAR

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3 LF

  • Package Description:

    LEAD FREE PACKAGE-3

  • Manufacturer Package Code:

    135AR

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    300

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

2N5088TAR Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N5088TAR is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 150°C for certain parameters.
  • To ensure proper biasing for switching applications, make sure to provide a sufficient base current to drive the transistor into saturation. A general rule of thumb is to provide a base current of at least 1/10th of the collector current.
  • The maximum collector-emitter voltage that the 2N5088TAR can withstand is 30V, although this can be derated based on the operating temperature and other factors.
  • While the 2N5088TAR can be used as a linear amplifier, it is not recommended due to its relatively low current gain (hFE) and high collector-emitter saturation voltage (VCE(sat)). A more suitable transistor for linear amplifier applications would be a device with a higher hFE and lower VCE(sat).
  • To handle ESD protection when working with the 2N5088TAR, follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensuring that all equipment and tools are properly grounded.

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2N5088TAR Overview

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