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2N5190G - onsemi

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2N5190G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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2N5190G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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2N5190G Details

  • Manufacturer Part Number:

    2N5190G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

2N5190G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5190G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure safe operation.
  • To ensure the 2N5190G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the 2N5190G depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of 10°C/W or lower is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a thermally conductive interface material.
  • Yes, the 2N5190G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the maximum switching frequency. Additionally, the device's saturation voltage and current handling capabilities should be taken into account to ensure reliable switching operation.
  • To protect the 2N5190G from electrostatic discharge (ESD), it's essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the device should be connected to a ground plane or ESD protection circuitry to prevent ESD damage during operation.

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2N5190G Overview

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Part Image 2N5190 onsemi

Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin