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2N5191G - onsemi

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2N5191G Details

  • Manufacturer Part Number:

    2N5191G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

2N5191G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5191G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the 2N5191G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the 2N5191G depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of 10°C/W or lower is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a thermally conductive interface material.
  • Yes, the 2N5191G can be used as a switch, but it is not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). The device is better suited for linear amplifier applications. If you must use it as a switch, ensure that the base drive is sufficient to saturate the device, and be aware of the potential for slow switching times and high power losses.
  • To protect the 2N5191G from electrostatic discharge (ESD), handle the device by the body, not the leads, and use an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's leads or pins. Additionally, use ESD-protected workstations and tools, and follow proper ESD handling procedures.

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2N5191G Overview

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Part Image 2N5191 Rochester Electronics LLC

4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA, CASE 77-09, 3 PIN

Part Image 2N5191 onsemi

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image 2N5191 TT Electronics Power and Hybrid / Semelab Limited

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image 2N5191 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image 2N5191 Texas Instruments

NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN

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