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2N5192G - onsemi

Description: Pb-Free Packages are Available

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2N5192G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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2N5192G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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2N5192G Details

  • Manufacturer Part Number:

    2N5192G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    7

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

2N5192G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5192G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area can be estimated to be around 10-15W for a typical application.
  • To ensure the 2N5192G is properly biased for linear operation, the base-emitter voltage (Vbe) should be around 0.65-0.7V, and the collector-emitter voltage (Vce) should be around 1-2V. The base current should be limited to around 1-5mA to avoid saturation.
  • For optimal thermal management, the 2N5192G should be mounted on a heat sink with a thermal resistance of around 10-20°C/W. The PCB layout should ensure good thermal conductivity and minimal thermal resistance. A copper pour or thermal vias can be used to improve heat dissipation.
  • While the 2N5192G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching. The device's maximum switching frequency is around 100kHz.
  • To protect the 2N5192G from ESD, it is recommended to handle the device with an anti-static wrist strap or mat. The device should be stored in an anti-static bag or tube, and PCBs should be designed with ESD protection circuits, such as TVS diodes or resistors, to prevent ESD damage.

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2N5192G Overview

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Part Image 2N5192 TT Electronics Power and Hybrid / Semelab Limited

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Part Image 2N5192 Crimson Semiconductor Inc

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For a full list of alternate parts for 2N5192G, check out Findchips.com