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2N5195G - onsemi

Description: Pb-Free Packages are Available

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PCB Footprints
2N5195G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225
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2N5195G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225
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2N5195G Details

  • Manufacturer Part Number:

    2N5195G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    7

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

2N5195G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5195G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with onsemi's application notes or contact their support team for more information.
  • To ensure the 2N5195G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, you should ensure the device is operated within its recommended operating conditions, including temperature, current, and voltage ranges.
  • The recommended PCB layout and thermal management for the 2N5195G involve using a thermally efficient PCB design, such as a 2-layer or 4-layer board with a large copper area for heat dissipation. You should also ensure good thermal conductivity between the device and the heat sink, and consider using thermal interface materials (TIMs) to minimize thermal resistance. Consult onsemi's application notes and PCB design guidelines for more information.
  • While the 2N5195G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, with a typical rise time of around 10-20ns. Additionally, the device's maximum switching frequency is limited by its internal capacitances and inductances. Consult onsemi's application notes and switching transistor datasheets for more information on using the 2N5195G in switching applications.
  • To handle ESD protection for the 2N5195G, you should follow standard ESD protection guidelines, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices (such as TVS diodes or ESD protection arrays) in your circuit design. Additionally, ensure that your PCB design includes adequate ESD protection features, such as ESD protection zones and guard rings.

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2N5195G Overview

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