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2N5210BU - onsemi

Description: Bipolar (BJT) Transistor NPN 50 V 100 mA 30MHz 625 mW Through Hole TO-92-3

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PCB Footprints
2N5210BU - onsemi PCB footprint - Other - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O_2025-1
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3D Models
2N5210BU - onsemi  - 3D model - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O_2025-1
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2N5210BU Details

  • Manufacturer Part Number:

    2N5210BU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3

  • Package Description:

    LEAD FREE PACKAGE-3

  • Manufacturer Package Code:

    135AN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    250

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.62 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

2N5210BU Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N5210BU is -55°C to 150°C.
  • Yes, the 2N5210BU is suitable for switching applications due to its high switching speed and low saturation voltage.
  • To ensure reliability, follow proper handling and storage procedures, and ensure the device is operated within its recommended operating conditions.
  • The recommended mounting technique for the 2N5210BU is through-hole mounting, with a maximum lead temperature of 260°C for 10 seconds.
  • Yes, the 2N5210BU can be used in linear amplifier applications due to its high current gain and low noise figure.

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2N5210BU Overview

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2N5210BU Alternates

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Image Part Number Model
Part Image 2N5210TF Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5210/D27Z-J18Z Texas Instruments

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

Part Image 2N5210/D89Z Texas Instruments

50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

Part Image 2N5210D27Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5210/D81Z Texas Instruments

50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

For a full list of alternate parts for 2N5210BU, check out Findchips.com