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2N5458 - onsemi

Description: 25 V N-Channel JFET Transistor

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2N5458 - onsemi PCB footprint - Other - Other - 2N5458-4
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2N5458 - onsemi  - 3D model - Other - 2N5458-4
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2N5458 Details

  • Manufacturer Part Number:

    2N5458

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    TO-226, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N5458 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5458 is not explicitly stated in the datasheet. However, it is generally recommended to operate the transistor within the specified voltage and current ratings to ensure reliable operation. Consult the application notes or contact onsemi support for more information.
  • To ensure the 2N5458 is properly biased for linear operation, set the base voltage (VBE) to around 0.7V and adjust the collector-emitter voltage (VCE) to the desired level. The base current (IB) should be limited to prevent saturation. Consult the datasheet and application notes for more information on biasing the transistor.
  • The maximum power dissipation for the 2N5458 is not explicitly stated in the datasheet. However, the transistor has a maximum collector current (IC) rating of 500mA and a maximum collector-emitter voltage (VCE) rating of 300V. The power dissipation can be calculated using the formula P = VCE * IC. Ensure the transistor is properly heat-sinked to prevent overheating.
  • Yes, the 2N5458 can be used as a switch. However, it is essential to ensure the transistor is properly biased and driven to achieve the desired switching characteristics. The transistor's switching speed and frequency response should be considered when designing the circuit. Consult the datasheet and application notes for more information on using the 2N5458 as a switch.
  • To protect the 2N5458 from electrostatic discharge (ESD), handle the transistor by the body or use an anti-static wrist strap or mat. Ensure the workspace is ESD-safe, and use ESD-protected packaging and storage materials. Avoid touching the transistor's pins or leads, and use a soldering iron with an ESD-safe tip.

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2N5458 Overview

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Part Image 2N5458TRE Central Semiconductor Corp

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Part Image 2N5458D27Z Fairchild Semiconductor Corporation

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Part Image 2N5458 Calogic Inc

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Part Image 2N5458D74Z Fairchild Semiconductor Corporation

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Part Image 2N5458/D27Z Texas Instruments

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

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