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2N6036G - onsemi

Description: Obsolete - 4.0 A, 60 V NPN Darlington Bipolar Power Transistor

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PCB Footprints
2N6036G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225*
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3D Models
2N6036G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225*
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2N6036G Details

  • Manufacturer Part Number:

    2N6036G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

2N6036G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N6036G is -55°C to 150°C.
  • To ensure proper biasing, the 2N6036G requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
  • The recommended gate resistor value for the 2N6036G is between 1kΩ to 10kΩ, depending on the specific application and switching frequency.
  • Yes, the 2N6036G can be used in high-frequency switching applications up to 100 kHz, but it's essential to ensure proper PCB layout, decoupling, and gate drive to minimize ringing and oscillations.
  • To protect the 2N6036G from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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2N6036G Overview

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Part Image 2N6036 Micro Commercial Components

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, Silicon, TO-126, Plastic/Epoxy, 3 Pin