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2N6038 - onsemi

Description: Obsolete - 4.0 A, 60 V NPN Darlington Bipolar Power Transistor

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PCB Footprints
2N6038 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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3D Models
2N6038 - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
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2N6038 Details

  • Manufacturer Part Number:

    2N6038

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

2N6038 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6038 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N6038 requires a minimum gate-to-source voltage (Vgs) of 2V and a maximum drain-to-source voltage (Vds) of 400V. Additionally, the gate-to-source current (Igs) should be limited to 10mA to prevent damage.
  • The maximum power dissipation for the 2N6038 is 125W, but this can be increased to 250W with proper heat sinking and thermal management.
  • Yes, the 2N6038 can be used in high-frequency applications up to 100kHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and layout parasitics to ensure optimal performance.
  • To protect the 2N6038 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube. Additionally, use ESD-sensitive handling procedures during assembly and testing.

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2N6038 Overview

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Part Image 2N6038 General Transistor Corp

Power Bipolar Transistor, 4A I(C), NPN

Part Image 2N6038G onsemi

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image 2N6038 STMicroelectronics

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin