Part Image

2N6039G - onsemi

Description: Obsolete - 8.0 A, 60 V PNP Darlington Bipolar Power Transistor

Download 2N6039G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2N6039G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
click to zoom
3D Models
2N6039G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUE AD
click to zoom

2N6039G Details

  • Manufacturer Part Number:

    2N6039G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

2N6039G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6039G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, which is 150°C for the 2N6039G.
  • To ensure the 2N6039G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically 0.6-0.8V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation.
  • The recommended heatsink design for the 2N6039G depends on the specific application and operating conditions. However, as a general guideline, a heatsink with a thermal resistance of 1-2°C/W is recommended to maintain a safe junction temperature. The heatsink should also be designed to minimize thermal resistance and ensure good thermal contact with the device.
  • While the 2N6039G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and voltage ratings should be carefully considered to ensure reliable operation.
  • To protect the 2N6039G from electrostatic discharge (ESD), it is recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that all equipment and tools are properly grounded. Additionally, the device should be stored in an ESD-safe environment and handled with ESD-safe materials.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2N6039G Overview

Use the download button to access the 2N6039G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N603, or try a keyword search, such as Power Bipolar Transistors

Parts related to 2N6039G

Showing 0 results

2N6039G Alternates

Showing results

Image Part Number Model
Part Image 2N6039 General Transistor Corp

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image 2N6039 Advanced Semiconductor Inc

Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image 2N6039 Texas Instruments

NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN

Part Image 2N6039 National Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image 2N6039 Space Power Electronics Inc

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for 2N6039G, check out Findchips.com