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2N6043G - onsemi

Description: High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045; Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Pb-Free Packages are Available

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2N6043G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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2N6043G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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2N6043G Details

  • Manufacturer Part Number:

    2N6043G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6043G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6043G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal limits to ensure reliable operation.
  • To ensure the 2N6043G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that ensures the device operates within its linear region. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including temperature and current limits.
  • The recommended storage and handling procedure for the 2N6043G involves storing the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. It's also essential to handle the devices by the body, rather than the leads, to prevent damage and electrostatic discharge (ESD). Additionally, it's recommended to follow standard ESD precautions when handling the devices, such as using an anti-static wrist strap or mat.
  • While the 2N6043G is primarily designed for linear applications, it can be used in switching applications with some caution. However, it's essential to ensure the device is operated within its recommended switching frequency and duty cycle limits to prevent overheating and premature failure. Additionally, the device's switching characteristics, such as its rise and fall times, should be carefully considered to ensure reliable operation.
  • The thermal resistance (RθJA) of the 2N6043G can be determined by using the device's thermal model, which is typically provided in the datasheet. The thermal model takes into account the device's package, lead frame, and die attach materials, as well as the PCB's thermal conductivity and airflow. By using the thermal model, you can estimate the device's junction temperature (TJ) and thermal resistance (RθJA) in a specific application.

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2N6043G Overview

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Part Image 2N6043-6258 Intersil Corporation

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

Part Image 2N6043-6265 Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6043-6258 Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6043-DR6259 Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6043-6255 Intersil Corporation

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

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