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2N6045G - onsemi

Description: High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045; Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Pb-Free Packages are Available

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PCB Footprints
2N6045G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
2N6045G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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2N6045G Details

  • Manufacturer Part Number:

    2N6045G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6045G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6045G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N6045G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. You may need to adjust the bias resistors and voltage sources to achieve the desired operating point.
  • The recommended storage temperature range for the 2N6045G is -55°C to 150°C. It's essential to store the device within this range to prevent damage and ensure reliable operation.
  • While the 2N6045G is primarily designed for linear applications, it can be used in switching applications with some caution. However, you should be aware of the device's switching characteristics, such as the turn-on and turn-off times, and ensure that the device is properly driven to prevent overheating and ensure reliable operation.
  • To handle ESD protection for the 2N6045G, you should follow standard ESD handling procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, you can consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to your circuit design to protect the 2N6045G from electrostatic discharge.

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2N6045G Overview

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Part Image 2N6045-6264 Intersil Corporation

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For a full list of alternate parts for 2N6045G, check out Findchips.com