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2N6081 - Motorola

Description: RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, SILICON, NPN

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2N6081 Details

  • Manufacturer Part Number:

    2N6081

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Motorola Semiconductor Products

  • YTEOL:

    0

  • Collector Current-Max (IC):

    2.5 A

  • Collector-Base Capacitance-Max:

    85 pF

  • Collector-Emitter Voltage-Max:

    18 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    O-CRPM-F4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    ROUND

  • Package Style:

    POST/STUD MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    31 W

  • Power Gain-Min (Gp):

    6.3 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    RADIAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N6081 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6081 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure reliable operation of the 2N6081 in high-temperature environments, it's essential to provide adequate heat sinking, ensure good thermal conductivity between the device and the heat sink, and avoid exceeding the maximum junction temperature (Tj) rating of 150°C. Additionally, consider derating the device's power handling capabilities at higher temperatures to prevent thermal runaway.
  • The recommended storage temperature range for the 2N6081 is -55°C to 150°C. Storing the device outside this range may affect its reliability and performance. It's also important to follow proper storage and handling procedures to prevent damage from electrostatic discharge (ESD) and physical stress.
  • While the 2N6081 is primarily designed for linear amplifier applications, it can be used in switching applications with caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's power handling capabilities and thermal characteristics should be carefully considered to prevent overheating and ensure reliable operation.
  • To prevent thermal runaway in the 2N6081, ensure that the device is operated within its specified maximum ratings, provide adequate heat sinking, and avoid excessive power dissipation. Monitor the device's temperature and adjust the operating conditions accordingly. Additionally, consider using thermal protection circuits or devices to prevent thermal runaway.

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2N6081 Overview

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