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2N6109G - onsemi

Description: Obsolete - 7.0 A, 30 V PNP Bipolar Power Transistor

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PCB Footprints
2N6109G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
2N6109G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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2N6109G Details

  • Manufacturer Part Number:

    2N6109G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

2N6109G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6109G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N6109G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (Vce) is within the recommended range (typically around 1-10V). Additionally, you should ensure that the device is operated within its recommended current and power dissipation limits.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conduction and heat dissipation. This can include using a thermal pad or heat sink, and ensuring that the device is mounted on a thick, thermally conductive PCB material. Additionally, it's recommended to follow good PCB design practices, such as using a solid ground plane and minimizing thermal resistance.
  • To handle ESD protection for the 2N6109G, it's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices (such as TVS diodes or ESD protection arrays) into the circuit design. Additionally, it's recommended to ensure that the device is properly grounded and that the PCB layout is designed to minimize ESD susceptibility.
  • To ensure the reliability and longevity of the 2N6109G, it's recommended to follow standard storage and handling procedures, such as storing the devices in a cool, dry place, away from direct sunlight and moisture. Additionally, it's recommended to handle the devices by the body, rather than the leads, and to avoid bending or flexing the leads during handling.

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2N6109G Overview

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