Part Image

2N6111G - onsemi

Description: Obsolete - 20 A, 80 V PNP Darlington Bipolar Power Transistor

Download 2N6111G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2N6111G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
click to zoom
3D Models
2N6111G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
click to zoom

2N6111G Details

  • Manufacturer Part Number:

    2N6111G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

2N6111G Frequently Asked Questions (FAQs)

  • The maximum safe operating temperature for the 2N6111G is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure the 2N6111G is properly biased for linear operation, you should provide a stable voltage supply, use a suitable biasing network, and ensure the base-emitter voltage is within the recommended range (typically 0.6-0.8V). Additionally, consider using a voltage regulator and decoupling capacitors to minimize noise and voltage fluctuations.
  • For optimal thermal management, use a heat sink with a thermal resistance of 10°C/W or lower. Ensure good thermal contact between the transistor and heat sink. On the PCB, use a solid ground plane, keep the transistor away from high-current paths, and use thermal vias to dissipate heat. Follow standard PCB design guidelines for high-frequency and high-power applications.
  • To protect the 2N6111G from ESD, handle the device by the body, not the leads. Use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Store the device in an anti-static bag or container. When handling the device, touch a grounded object to discharge any static electricity before handling the transistor.
  • Follow standard soldering guidelines for high-power transistors. Use a soldering iron with a temperature of 250°C or lower, and avoid applying excessive heat or force. Ensure the transistor is properly seated in its socket or PCB footprint, and use a solder with a melting point above 180°C. Avoid using excessive solder or flux, and clean the area thoroughly after soldering.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2N6111G Overview

Use the download button to access the 2N6111G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N611, or try a keyword search, such as Power Bipolar Transistors

Parts related to 2N6111G

Showing 0 results

2N6111G Alternates

Showing results

Image Part Number Model
Part Image 2N6111 Continental Device India Ltd

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6111 Swampscott Electronics Co Inc

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image D45H2A onsemi

Power Bipolar Transistor, 8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6111 Texas Instruments

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6111 Space Power Electronics Inc

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for 2N6111G, check out Findchips.com