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2N6288G - onsemi

Description: DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices; TO-220AB Compact Package; High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11; Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292; Pb-Free Packages are Available

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PCB Footprints
2N6288G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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2N6288G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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2N6288G Details

  • Manufacturer Part Number:

    2N6288G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    16 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

2N6288G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6288G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
  • To ensure the 2N6288G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6-0.8V, and the collector-emitter voltage (Vce) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be limited to prevent overheating.
  • For optimal thermal management, it is recommended to use a PCB with a large copper area for heat dissipation, and to place the transistor close to a heat sink or thermal pad. The transistor's thermal pad should be connected to a copper plane or heat sink using a thermal interface material. A minimum of 1 oz copper thickness is recommended for the PCB.
  • To protect the 2N6288G from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins. Additionally, handling the device with ESD-safe materials and tools, and storing it in an ESD-safe environment can help prevent ESD damage.
  • The 2N6288G should be stored in a dry, cool place, away from direct sunlight and moisture. The device should be handled with ESD-safe materials and tools, and should not be exposed to mechanical stress or vibration. It is also recommended to follow the manufacturer's recommended storage and handling procedures.

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2N6288G Overview

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Part Image 2N6288 General Transistor Corp

Power Bipolar Transistor, 7A I(C), 1-Element, NPN

Part Image 2N6288 Central Semiconductor Corp

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6288 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin

Part Image 2N6288 Micro Electronics Corporation

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Part Image 2N6288 Crimson Semiconductor Inc

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for 2N6288G, check out Findchips.com