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2N6292G - onsemi

Description: DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices; TO-220AB Compact Package; High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11; Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292; Pb-Free Packages are Available

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PCB Footprints
2N6292G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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2N6292G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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2N6292G Details

  • Manufacturer Part Number:

    2N6292G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    70 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    16 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

2N6292G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6292G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with onsemi's application notes or contact their support team for more information.
  • To ensure the 2N6292G is properly biased, follow the recommended biasing conditions outlined in the datasheet, and consider the following: 1) ensure the base-emitter voltage (VBE) is within the recommended range, 2) maintain a stable collector-emitter voltage (VCE), and 3) provide adequate base current (IB) to achieve the desired collector current (IC). Additionally, consider using a voltage regulator or a current source to stabilize the bias voltage and current.
  • For optimal thermal performance, it's recommended to follow good PCB layout practices, such as: 1) using a thermal pad or heat sink, 2) keeping the device away from heat sources, 3) using thermal vias to dissipate heat, and 4) ensuring good airflow around the device. Consult onsemi's application notes or PCB design guides for more specific recommendations.
  • To protect the 2N6292G from ESD, follow standard ESD protection practices, such as: 1) handling the device in an ESD-controlled environment, 2) using ESD-protective packaging and storage, 3) grounding yourself before handling the device, and 4) using ESD-protection devices, such as TVS diodes or ESD-protection ICs, in the circuit design.
  • The reliability and lifespan of the 2N6292G depend on various factors, including operating conditions, environmental factors, and manufacturing quality. onsemi provides reliability data and qualification reports for their devices, which can be requested through their website or by contacting their support team. Additionally, consider following industry-standard reliability testing and qualification procedures to ensure the device meets your specific application requirements.

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2N6292G Overview

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Part Image 2N6292 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin

Part Image 2N6292 Micro Electronics Corporation

Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Part Image 2N6292 Texas Instruments

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Part Image 2N6292 RCA

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Part Image 2N6292 National Semiconductor Corporation

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