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2N6350 - Microsemi Corporation

Description: NPN Darlington Power Silicon Transistor, TO-33

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2N6350 - Microsemi Corporation PCB footprint - Other - Other - TO-33
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2N6350 - Microsemi Corporation  - 3D model - Other - TO-33
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2N6350 Details

  • Manufacturer Part Number:

    2N6350

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-33

  • Package Description:

    TO-33, 4 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Collector Current-Max (IC):

    5 A

  • Configuration:

    DARLINGTON

  • DC Current Gain-Min (hFE):

    400

  • JEDEC-95 Code:

    TO-33

  • JESD-30 Code:

    O-MBCY-W4

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    1200 ns

  • Turn-on Time-Max (ton):

    500 ns

2N6350 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6350 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N6350 requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
  • The maximum allowable power dissipation for the 2N6350 is 125W, but this can be increased to 250W with proper heat sinking and thermal management.
  • Yes, the 2N6350 can be used in switching applications, but it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the 2N6350 from ESD, it's recommended to handle the device with anti-static wrist straps, mats, or bags, and to ensure that the device is properly grounded during assembly and testing.

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2N6350 Overview

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Part Image JANTX2N6350 Microsemi Corporation (now Microchip)

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Part Image 2N6350E3 Microsemi Corporation (now Microchip)

Small Signal Bipolar Transistor

Part Image JANTX2N6350 Spectrum Control

Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33

Part Image 2N6350 Spectrum Control

Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33

Part Image JANTXV2N6350 Spectrum Control

Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33

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