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2N6449 - InterFET

Description: JFET N-Channel -300V Low Ciss

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Symbol
2N6449 - InterFET - PCB symbol
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PCB Footprints
2N6449 - InterFET PCB footprint - Other - Other - TO-39_Master
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3D Models
2N6449 - InterFET - 3D model - Other - TO-39_Master
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2N6449 Details

  • Manufacturer Part Number:

    2N6449

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-39

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N6449 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N6449 is -55°C to 150°C, although it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper biasing, make sure to provide a stable voltage supply, and set the gate-source voltage (Vgs) within the recommended range of -2V to 2V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 0V to 400V.
  • The recommended gate drive voltage for the 2N6449 is 10V to 15V, although it can operate with a gate drive voltage as low as 5V. However, a higher gate drive voltage may be required for high-frequency applications.
  • Yes, the 2N6449 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the 2N6449 from ESD, handle the device with anti-static wrist straps, mats, or bags. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or resistors, and follow proper assembly and handling procedures.

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2N6449 Overview

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