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2N6488G - onsemi

Description: DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc; Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491; High Current Gain--Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available

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2N6488G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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2N6488G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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2N6488G Details

  • Manufacturer Part Number:

    2N6488G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    5 MHz

2N6488G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6488G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 60-70% of its maximum rating to ensure reliable operation.
  • To ensure the 2N6488G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6-0.8V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation and ensure linear operation.
  • For optimal thermal management, it is recommended to use a heat sink with a thermal resistance of less than 10°C/W. The PCB layout should also be designed to minimize thermal resistance and ensure good airflow around the device. A minimum of 1 oz copper thickness and a 2-layer PCB is recommended.
  • While the 2N6488G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the 2N6488G from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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2N6488G Overview

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