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2N6509G - onsemi

Description: SCR Thyristor 2N6509G, 800V 16A 30mA, TO-220AB 3-Pin

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PCB Footprints
2N6509G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6509G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6509G Details

  • Manufacturer Part Number:

    2N6509G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220AB

  • Package Description:

    LEAD FREE, CASE 221A-07, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • Case Connection:

    ANODE

  • Configuration:

    SINGLE

  • DC Gate Trigger Current-Max:

    30 mA

  • DC Gate Trigger Voltage-Max:

    1.5 V

  • Holding Current-Max:

    40 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    2 mA

  • Non-Repetitive Pk On-state Cur:

    250 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-state Current-Max:

    8000 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    25 A

  • Repetitive Peak Off-state Voltage:

    800 V

  • Repetitive Peak Reverse Voltage:

    800 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Trigger Device Type:

    SCR

2N6509G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6509G is -55°C to 150°C.
  • To ensure proper biasing, the 2N6509G requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
  • The maximum allowable power dissipation for the 2N6509G is 125W at a case temperature of 25°C.
  • To protect the 2N6509G from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the device is stored in an anti-static bag or container.
  • Yes, the 2N6509G can be used in high-frequency applications up to 1 MHz, but the device's performance may degrade at higher frequencies due to its internal capacitances and inductances.

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2N6509G Overview

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