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2N6517BU - onsemi

Description: Voltage and Current are Negative for PNP Transistors

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2N6517BU - onsemi PCB footprint - Other - Other - TO−92 3 4.825x4.76CASE 135AN ISSUE O
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2N6517BU - onsemi  - 3D model - Other - TO−92 3 4.825x4.76CASE 135AN ISSUE O
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2N6517BU Details

  • Manufacturer Part Number:

    2N6517BU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3

  • Manufacturer Package Code:

    135AN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

2N6517BU Frequently Asked Questions (FAQs)

  • The maximum safe operating temperature for the 2N6517BU is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, ensure that the base-emitter voltage (Vbe) is within the recommended range of 0.65V to 0.85V for optimal current gain and linearity.
  • Store the 2N6517BU in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or die to prevent damage from electrostatic discharge (ESD). Use anti-static packaging and follow proper ESD handling procedures to prevent damage.
  • While the 2N6517BU is primarily designed for linear amplifier applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Consult the datasheet and application notes for guidance on using the 2N6517BU in switching applications.
  • To troubleshoot common issues, start by verifying the biasing circuit and component values. Check for proper power supply decoupling, and ensure that the device is properly heatsinked. Use a scope to verify the input and output waveforms, and consult the datasheet and application notes for guidance on troubleshooting specific issues.

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2N6517BU Overview

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2N6517BU Alternates

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Image Part Number Model
Part Image 2N6517STOF Zetex / Diodes Inc

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon

Part Image 2N6517TA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N6517STZ Zetex / Diodes Inc

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon

Part Image 2N6517RLRP onsemi

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N6517G onsemi

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

For a full list of alternate parts for 2N6517BU, check out Findchips.com