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2N6550 - InterFET

Description: JFET JFET N-Channel -20V 50mA 400mW 2.3mW

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PCB Footprints
2N6550 - InterFET PCB footprint - Other - Other - TO-46
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2N6550 - InterFET  - 3D model - Other - TO-46
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2N6550 Details

  • Manufacturer Part Number:

    2N6550

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Additional Feature:

    LOW NOISE

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-46

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N6550 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6550 is typically defined by the manufacturer as the maximum voltage and current ratings, which are 250V and 10A, respectively. However, it's essential to consult the datasheet and application notes for specific guidance on SOA.
  • To ensure the 2N6550 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. Typically, this involves setting the base-emitter voltage (Vbe) to around 0.7V and the collector-emitter voltage (Vce) to around 1-2V. Additionally, ensure the transistor is operated within its recommended temperature range.
  • The thermal resistance of the 2N6550 is typically around 1.5°C/W (junction-to-case) and 50°C/W (junction-to-ambient). This means that for every watt of power dissipated, the junction temperature will rise by 1.5°C. To ensure proper heat dissipation, it's essential to provide adequate heat sinking, such as using a heat sink or thermal interface material.
  • Yes, the 2N6550 can be used as a switch. However, it's essential to consider the transistor's switching characteristics, such as the turn-on and turn-off times, and ensure that the base drive is sufficient to saturate the transistor. Additionally, consider the power dissipation and heat generation during switching, and ensure the transistor is properly heat-sinked.
  • To protect the 2N6550 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, and ensuring that the transistor is stored in a conductive container. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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