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2N6802 - Infineon

Description: Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39

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2N6802 - Infineon - PCB symbol
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2N6802 - Infineon PCB footprint - Other - Other - 2N6802
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2N6802 Details

  • Manufacturer Part Number:

    2N6802

  • Part Life Cycle Code:

    Active

  • Package Description:

    HERMETIC SEALED, TO-205AF, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.8

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    0.35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    11 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MILITARY STANDARD (USA)

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6802 Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A thermal via under the device can also help to reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The 2N6802 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the 2N6802 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application meets the recommended operating conditions.
  • The gate resistor value depends on the specific application requirements, such as switching frequency and voltage. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω to ensure proper switching performance.

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2N6802 Overview

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2N6802 Alternates

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Part Image JANTX2N6802 Infineon Technologies AG

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Part Image 2N6802-JQR-B TT Electronics Power and Hybrid / Semelab Limited

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Part Image 2N6802-JQR-AR1 TT Electronics Resistors

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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