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2N6849 - Infineon

Description: 2N6849 Series 100 V 0.30 Ohm -6.5 A P-Channel Hexfet Transistor - TO-39

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2N6849 - Infineon PCB footprint - Other - Other - TO-205AF / TO-39
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2N6849 Details

  • Manufacturer Part Number:

    2N6849

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.05

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    92 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MILITARY STANDARD (USA)

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6849 Frequently Asked Questions (FAQs)

  • The 2N6849 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the base to a voltage source through a resistor, and the emitter to ground through a resistor. The collector should be connected to a load or a voltage source.
  • The maximum collector current rating for the 2N6849 is 10A, making it suitable for high-current applications.
  • Yes, the 2N6849 can be used in switching applications due to its high switching speed and low saturation voltage.
  • To protect the 2N6849 from ESD, use anti-static wrist straps, mats, and packaging materials. Also, ensure that the device is handled in a static-free environment.

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